Surface states induced weak anti-localization effect in Bi_0.85Sb_0.15 topological single crystal

Competition between weak localization and antilocalization in topological surface states.

A magnetoconductivity formula is presented for the surface states of a magnetically doped topological insulator. It reveals a competing effect of weak localization and weak antilocalization in quantum transport when an energy gap is opened at the Dirac point by magnetic doping. It is found that, while random magnetic scattering always drives the system from the symplectic to the unitary class, ...

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

Topological insulators, a new quantum state of matter, create exciting opportunities for studying topological quantum physics and for exploring spintronic applications due to their gapless helical metallic surface states. Here, we report the observation of weak anti-localization and quantum oscillations originated from surface states in Bi₂Se₂Te crystals. Angle-resolved photoemission spectrosco...

Title Competition between weak localization and antilocalization in topological surface states

Competing weak localization and weak antilocalization in ultrathin topological insulators.

We demonstrate evidence of a surface gap opening in topological insulator (TI) thin films of (Bi(0.57)Sb(0.43))(2)Te(3) below six quintuple layers through transport and scanning tunneling spectroscopy measurements. By effective tuning the Fermi level via gate-voltage control, we unveil a striking competition between weak localization and weak antilocalization at low magnetic fields in nonmagnet...

Interpreting current-induced spin polarization in topological insulator surface states

Motivated by recent experiments, we address an ambiguity between the intrinsic in-plane spin projection of 2-dimensional surface states on 3-dimensional topological insulators and their ensemble spin polarization induced by a non-equilibrium charge current. Standard expressions from a Boltzmann equation approach in the relaxation-time approximation at zero and finite temperature are used to emp...